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兴发pt登录学报, 2019, 36(3): 82-87     https://doi.org/10.16039/j.cnki.cn22-1249.2019.03.017
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CaCu3Ti3.95Zr0.05O12陶瓷的介电性质研究
张圣诗,滕达,张磊,刘军伟
兴发pt登录 材料科学与工程学院
Study on the Dielectric Properties of CaCu3Ti3.95Zr0.05O12 Ceramic
ZHANG Shengshi, TENG Da, ZHANG Lei, LIU Junwei
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摘要 

CaCu3Ti4O12(CCTO)陶瓷具有高介电常数,研究掺杂离子对其结构和性质的影响有助于理解并优化其介电性能。本文利用X射线衍射仪(XRD)研究了CaCu3Ti3.95Zr0.05O12(CCTZ)陶瓷的结构,并利用宽温宽频介电分析仪研究了其在不同温度下介电常数、弛豫、阻抗和电模量等性质。XRD结果表明,5%的Zr能够完全并入到CCTO晶格中;阻抗谱和电模量的分析表明,低温和高温范围内的介电弛豫分别与晶粒和晶界的电学性质密切相关。Zr掺杂造成晶粒激活能增大,而晶界激活能几乎不变。

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张圣诗
滕达
张磊
刘军伟
关键词:  CaCu3Ti4O12  介电  阻抗  电模量     
Abstract: 

CaCu3Ti4O12 (CCTO) ceramic possesses high dielectric constant, and study of doping effects on the structure and properties is beneficial for the interpretation and optimization of dielectric properties of CCTO. In this work, we investigated the structure of CaCu3Ti3.95Zr0.05O12(CCTZ) ceramic by X-ray diffraction (XRD) and the properties of dielectric constant, relaxation, impedance, electric modulus at various temperatures with a dielectric analyzer in a broad range of frequency. The XRD results shows that Zr ions with 5% content can absolutely entered the CCTO crystal lattice. The analysis of impedance spectra and electric modulus suggested a close relationship between the electrical properties of grain and grain boundary and dielectric relaxations at low and high temperatures. Zr doping resulted in a large increase of activation energy of grain, while that for grain boundary was almost unchanged.

Key words:  CaCu3Ti4O12    dielectric    impedance    electric modulus
               出版日期:  2019-03-25      发布日期:  2019-03-25      整期出版日期:  2019-03-25
ZTFLH:  O469  
引用本文:    
张圣诗, 滕达, 张磊, 刘军伟. CaCu3Ti3.95Zr0.05O12陶瓷的介电性质研究 [J]. 兴发pt登录学报, 2019, 36(3): 82-87.
ZHANG Shengshi, TENG Da, ZHANG Lei, LIU Junwei. Study on the Dielectric Properties of CaCu3Ti3.95Zr0.05O12 Ceramic . Journal of Jilin Institute of Chemical Technology, 2019, 36(3): 82-87.
链接本文:  
http://xuebao.jlict.edu.cn/CN/10.16039/j.cnki.cn22-1249.2019.03.017  或          http://xuebao.jlict.edu.cn/CN/Y2019/V36/I3/82
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